Active hardmask for lithographic patterning
US7527920B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 2, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Jan 30, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.