Integrated circuit die containing particle-filled through-silicon metal vias with reduced thermal expansion
US7528006B2 · kind B2 · utility
12Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.