Profile adjustment in plasma ion implanter
US7528389B2 · kind B2 · utility
4Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Nov 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.