Semiconductor device with recessed gate and shield electrode
US7528443B2 · kind B2 · utility
2Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.