Gas temperature control for a plasma process
US7531061B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2004 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Jan 21, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.