Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors
US7531395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Aug 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming layers comprising epitaxial silicon, and methods of forming field effect transistors are disclosed. A method of forming a layer comprising epitaxial silicon includes etching an opening into a silicate glass-comprising material received over a monocrystalline material. The etching is conducted to the monocrystalline material effective to expose the monocrystalline material at a base of the opening. A silicon-comprising layer is epitaxially grown within the opening from the monocrystalline material exposed at the base of the opening. The silicate glass-comprising material is etched from the substrate effective to leave a free-standing projection of the epitaxially grown silicon-comprising layer projecting from the monocrystalline material which was at the base of the opening. Other implementations and aspects are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.