Semiconductor memory cell and corresponding method of producing same

US7531420B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Nirschl · Putzbrunn, DE
• Alexander Olbrich · Höhenkirchen-Siegertsbrunn, DE
• Martin Ostermayr · Straubing, DE

Key dates

• Filing date: Jul 26, 2006
• Grant date: May 12, 2009
• Expiry date: Jul 17, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a high integration density.