Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material
US7531437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2006 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Feb 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
Abstract
A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.