Method and system for fabricating semiconductor components with through interconnects and back side redistribution conductors
US7531443B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2006 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Jun 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor components includes the step of providing a semiconductor substrate having a circuit side, a back side, a plurality of integrated circuits on the circuit side, and a plurality of substrate contacts on the circuit side in electrical communication with the integrated circuits. The method also includes the steps of forming vias from the back side to the substrate contacts, forming a conductive layer in the vias and on the back side in electrical contact with the substrate contacts; and forming the conductive layer on the back side into a plurality of conductors in electrical communication with the substrate contacts. The semiconductor component includes the semiconductor substrate, the through interconnects and the redistribution conductors. Each through interconnect includes a via aligned with a substrate contact, and a conductive layer at least partially lining the via in physical and electrical contact with the substrate contact. Each conductor is formed by a portion of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.