Process and system for etching doped silicon using SF6-based chemistry
US7531461B2 · kind B2 · utility
2Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Sep 14, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Nov 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process and system for anisoptropically dry etching through a doped silicon layer is described. The process chemistry comprises SF6 and a fluorocarbon gas. For example, the fluorocarbon gas can include CxFy, where x and y are integers greater than or equal to unity, for example, C4F8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.