Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7532505B1 · kind B1 · utility
Assignees
Inventor
Key dates
| Filing date | Jul 17, 2006 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Dec 18, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.