Multilayer interconnect structure containing air gaps and method for making
US7534696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Sep 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilevel air-gap-containing interconnect structure and a method of fabricating the same are provided. The multilevel air-gap-containing interconnect structure includes a collection of interspersed line levels and via levels, with via levels comprising conductive vias embedded in one or more dielectric layers in which the dielectric layers are solid underneath and above line features in adjacent levels, and perforated between line features. The line levels contain conductive lines and an air-gap-containing dielectric. A solid dielectric bridge layer, containing conductive contacts and formed by filling in a perforated dielectric layer, is disposed over the collection of interspersed line and via levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.