Gate structure and method
US7535066B2 · kind B2 · utility
9Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2003 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Apr 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.