Optoelectronic substrate and methods of making same
US7537949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Apr 27, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an optoelectronic substrate by detaching a thin layer from a semi-conducting nitride substrate and transferring it to an auxiliary substrate to provide at least one semi-conducting nitride layer thereon, metallizing at least a portion of the surface of the auxiliary substrate that includes the transferred nitride layer, bonding to a final substrate the metallized surface portion of the transferred nitrate layer of the auxiliary substrate, and removing the auxiliary substrate to provide an optoelectronic substrate comprising a semi-conducting nitride surface layer over a subjacent metallized portion and a supporting final substrate. Resultant optoelectronic substrates having low dislocation densities are also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.