Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
US7538007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2004 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Jan 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.