Method of fabricating an epitaxially grown layer
US7538010B2 · kind B2 · utility
5Cited by
38References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Dec 30, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming an epitaxially grown layer by providing a support substrate that includes a region of weakness therein to define a support portion and a remainder portion on opposite sides of the region of weakness. The region of weakness comprises atomic species implanted in the support substrate to facilitate detachment of the support portion from the remainder portion. The method also includes epitaxially growing an epitaxially grown layer in association with the support portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.