Lateral semiconductor diode and method for fabricating it
US7538362B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Jan 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction (18) is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.