Patent · US Active

Photolithographic systems and methods for producing sub-diffraction-limited features

US7538858B2 · kind B2 · utility

39Cited by
43References
36Claims
0Family size

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Key dates

Filing dateJan 11, 2006
Grant dateMay 26, 2009
Priority date
Expiry dateMay 14, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70325
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Systems and methods for near-field photolithography utilize surface plasmon resonances to enable imaging of pattern features that exceed the diffraction limit. An example near-field photolithography system includes a plasmon superlens template including a plurality of opaque features to be imaged onto photosensitive material and a metal plasmon superlens. The opaque features and the metal superlens are separated by a polymer spacer layer. Light propagates through the superlens template to form an image of the opaque features on the other side of the superlens. An intermediary layer including solid or liquid material is interposed between the superlens and a photoresist-coated semiconductor wafer to reduce damage resulting from contact between the superlens template and the photoresist-coated semiconductor wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.