Calibration of optical line shortening measurements
US7541121B2 · kind B2 · utility
3Cited by
9References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 13, 2004 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Dec 11, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method of calibrating optical line shortening measurements, and lithography mask for same. The lithography mask comprises a plurality of gratings, with a calibration marker disposed within each grating. The mask is used to pattern resist on a semiconductor wafer for purposes of measuring and calibrating line shortening. The pattern on the wafer is measured and compared to measurements made of the pattern on the mask. The difference gives the amount of line shortening due to flare, and may be used to calibrate line shortening measurements made using optical measurement tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.