Thin film devices and methods for forming the same
US7541227B2 · kind B2 · utility
10Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Apr 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.