Semiconductor device having a trench gate and method of fabricating the same
US7541244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Sep 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.