Reduction of feature critical dimensions
US7541291B2 · kind B2 · utility
5Cited by
14References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2007 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Aug 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.