Phase change memory cell having a sidewall contact

US7541609B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Qimonda North America Corp. · US

Inventors

• Thomas Nirschl · Putzbrunn, DE
• Mark C. H. Lamorey · South Burlington, US

Key dates

• Filing date: Nov 17, 2006
• Grant date: Jun 2, 2009
• Expiry date: Oct 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall and the second sidewall. The memory cell includes phase change material contacting the first electrode and the first sidewall and the second sidewall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first sidewall and the second sidewall.