Relaxed-pitch method of aligning active area to digit line
US7541632B2 · kind B2 · utility
3Cited by
77References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 14, 2005 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Mar 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/00
Abstract
According to one aspect of the invention, a memory device is disclosed. The memory device comprises a substantially linear active area comprising a source and at least two drains defining a first axis. The memory device further comprises at least two substantially parallel word lines, at least a portion of a first word line located between a first drain and the source, and at least a portion of a second word line located between a second drain and the source, which word lines define a second axis. The memory device further comprises a digit line coupled to the source, wherein the digit line forms a substantially zig-zag pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.