Patent · US Active

Gate electrode structures

US7541650B2 · kind B2 · utility

5Cited by
13References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 9, 2007
Grant dateJun 2, 2009
Priority date—
Expiry dateOct 27, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/28202
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.