Integrated circuit and method for manufacturing

US7543917B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Simon Dodd · West Linn, US
• S. Jonathan Wang · Albany, US
• Dennis Tom · Corvallis, US
• Frank R. Bryant · Denton, US
• Terry McMahon · Corvallis, US
• Richard T. Miller · Manitowoc, US
• Gregory Hindman · Albany, US

Key dates

• Filing date: Sep 29, 2006
• Grant date: Jun 9, 2009
• Expiry date: May 25, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Textile and paper machines
• WIPO sector: Mechanical engineering

Abstract

A method of forming a semiconductor device, the method including forming a substrate including a first surface having a non-doped region, forming an insulative material over the first surface of the substrate, forming a first conductive material over the first insulative material, forming an opening in the first conductive material that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material, forming a second insulative material over the first conductive material, and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contacts the non-doped region of the substrate.