Controlled nano-doping of ultra thin films
US7544398B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45531
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.