Tony P. Chiang
270Patents
32h-index
104Co-inventors
93Inventor score
Filing activity: Apr 29, 1997 → Jan 7, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6428859B1 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 686 | Expired |
| US8440259B2 | Vapor based combinatorial processing | Chemistry; Metallurgy | 518 | Active |
| US6878402B2 | Method and apparatus for improved temperature control in atomic layer deposition | Electricity | 476 | Expired |
| US7544398B1 | Controlled nano-doping of ultra thin films | Chemistry; Metallurgy | 409 | Expired |
| US6416822B1 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 298 | Expired |
| US6630201B2 | Adsorption process for atomic layer deposition | Electricity | 240 | Expired |
| US6569501B2 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 171 | Expired |
| US8183553B2 | Resistive switching memory element including doped silicon electrode | Electricity | 127 | Active |
| US6328871A | Barrier layer for electroplating processes | Electricity | 110 | Expired |
| US6066892A | Copper alloy seed layer for copper metallization in an integrated circuit | Electricity | 107 | Expired |
| US8144498B2 | Resistive-switching nonvolatile memory elements | Physics | 101 | Active |
| US7629198B2 | Methods for forming nonvolatile memory elements with resistive-switching metal oxides | Electricity | 98 | Active |
| US6800173B2 | Variable gas conductance control for a process chamber | Electricity | 94 | Expired |
| US6287977A | Method and apparatus for forming improved metal interconnects | Electricity | 93 | Expired |
| US8143092B2 | Methods for forming resistive switching memory elements by heating deposited layers | Electricity | 88 | Active |
| US6037257A | Sputter deposition and annealing of copper alloy metallization | Electricity | 84 | Expired |
| US6398929B1 | Plasma reactor and shields generating self-ionized plasma for sputtering | Electricity | 69 | Expired |
| US7972897B2 | Methods for forming resistive switching memory elements | Electricity | 69 | Active |
| US6919275B2 | Method of preventing diffusion of copper through a tantalum-comprising barrier layer | Electricity | 59 | Expired |
| US7309658B2 | Molecular self-assembly in substrate processing | Emerging Cross-Sectional Technologies | 55 | Active |
| US6139699A | Sputtering methods for depositing stress tunable tantalum and tantalum nitride films | Electricity | 48 | Expired |
| US6387805B2 | Copper alloy seed layer for copper metallization | Electricity | 44 | Expired |
| US6582569B1 | Process for sputtering copper in a self ionized plasma | Electricity | 41 | Expired |
| US6413383B1 | Method for igniting a plasma in a sputter reactor | Electricity | 40 | Expired |
| US6559061B2 | Method and apparatus for forming improved metal interconnects | Electricity | 40 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.