Negative bias critical dimension trim
US7544521B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Feb 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of trimming the critical dimension of an isolated line to a greater extent than a dense line is provided. A mask is formed of an organic material over the etch layer wherein the mask has at least a first region with a first pattern density and a second region with a second pattern density. A surface area of the organic material in the first region is measured. A surface area of the organic material in the second region is measured. A reverse bias trim of the mask is provided, wherein a ratio of a trim rate of the organic material in the first region to a trim rate of the organic material in the second region is related to a ratio of the measured surface area of the organic material in the first region to the measured surface area of the organic material in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.