Method of making a contact on a backside of a die
US7544605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Jun 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer is formed over the second major surface and adjacent the first via. The dielectric layer may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.