Methods of forming nitride read only memory and word lines thereof
US7544616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Dec 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming word lines of a memory includes providing a substrate and forming a conductive layer on the substrate. A metal silicide layer is formed on the conductive layer, and a mask pattern is formed on the metal silicide layer. A mask liner covering the mask pattern and the surface of the metal silicide layer is formed on the substrate to shorten distances between the word line regions. An etching process is performed on the mask liner and the mask pattern until the partial surface of the metal silicide layer is exposed. The metal silicide layer and the conductive layer are etched to form word lines by utilizing the mask liner and the mask pattern as a mask. A silicon content of the metal silicide layer must be less than or equal to 2 for reducing a bridge failure rate between the word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.