Two-step chemical mechanical polishing process
US7544618B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2006 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Jun 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.