MTJ read head with sidewall spacers
US7544983B2 · kind B2 · utility
6Cited by
8References
6Claims
0Family size
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Key dates
| Filing date | Jul 3, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Aug 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this problem by depositing silicon nitride spacers on these sidewalls prior to oxide deposition and CMP. So, even though the stack may protrude through the top surface of the oxide after CMP, the spacers serve to prevent possible later shorting to the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.