Mushroom phase change memory having a multilayer electrode
US7545668B2 · kind B2 · utility
21Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
An integrated circuit includes a first electrode including at least two electrode material layers and a resistivity changing material including a first portion and a second portion. The first portion contacts the first electrode and has a same cross-sectional width as the first electrode. The second portion has a greater cross-sectional width than the first portion. The integrated circuit includes a second electrode coupled to the resistivity changing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.