Patent · US Active

Resistive memory device

US7545669B2 · kind B2 · utility

2Cited by

17References

23Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Jun Liu · 红钢城街道, CN
Glen E. Hush · Boise, US
Mike Violette · Boise, US
Mark D. Ingram · Boise, US

Key dates

Filing date	Feb 6, 2008
Grant date	Jun 9, 2009
Priority date	—
Expiry date	Feb 6, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.