Methods of processing semiconductor wafers having silicon carbide power devices thereon
US7547578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | May 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.