Method of fabricating a surface adapting cap with integral adapting material for single and multi chip assemblies
US7547582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Mar 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16152
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface adapting cap with an integrated adapting thermally conductive material on single and multi chip module provides reduced gap tolerance and hence better thermal performance of the semiconductor device which enhances the reliability of the semiconductor device. In one of the embodiments the cap is modified with an integrated, confined, and high thermal adaptive material. The membrane on this system is highly flexible. The cap is preassembled to the chip at a temperature above liquidus below curing temperature of the adaptive material. At this state, a hydrostatic pressure in the material develops due to the compression exerted from the cap to the chip and the confined volume of the buried material. This hydrostatic pressure causes the membrane to deflect and to adapt the warping and tolerances of the chip. Due to the adaptive surface the gap on each position of the chip and from chip to chip is same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.