Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics
US7547616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Jul 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.