Device packages having a III-nitride based power semiconductor device
US7547964B2 · kind B2 · utility
18Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | May 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.