Switch mode power amplifier using MIS-HEMT with field plate extension
US7548112B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 2005 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Jul 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.