Hard mask structure for patterning of materials
US7550044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2008 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Apr 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.