Patent · US Active

Interconnect for improved die to substrate electrical coupling

US7550318B2 · kind B2 · utility

5Cited by

7References

20Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Kevin J. Hess · Austin, US
Chu-Chung Lee · Round Rock, US
James W. Miller · Austin, US

Key dates

Filing date	Aug 11, 2006
Grant date	Jun 23, 2009
Priority date	—
Expiry date	Jan 8, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19043
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for forming peripheral contacts between a die and a substrate. In accordance with the method, a die (305) is provided which has first and second opposing major surfaces, wherein the first major surface is attached to a substrate (303) having a first group (323) of contact pads disposed thereon, and wherein the second major surface has a second group (311) of contact pads disposed thereon. An electrically conductive pathway (326) is formed between the first and second groups of contacts with an electrically conductive polymeric composition.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.