Method for fabricating an NMOS transistor
US7550336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Feb 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an NMOS transistor is disclosed. First, a substrate having a gate structure thereon is provided. A carbon implantation process is performed thereafter by implanting carbon atoms into the substrate for forming a silicon carbide region in the substrate. Subsequently, a source/drain region is formed surrounding the gate structure. By conducting a carbon implantation process into the substrate and a corresponding amorphorized implantation process before or after the carbon implantation process is completed, the present invention eliminates the need of forming a recess for accommodating an epitaxial layer composed of silicon carbide while facilitates the formation of silicon carbide from the combination of both implantation processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.