Ion beam scanning control methods and systems for ion implantation uniformity
US7550751B2 · kind B2 · utility
3Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2007 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Aug 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.