Switchable memory diode—a new memory device
US7550761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2006 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Apr 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/611
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.