Integrated III-nitride power devices
US7550781B2 · kind B2 · utility
35Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Feb 11, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.