Salicide process utilizing a cluster ion implantation process
US7553763B2 · kind B2 · utility
13Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2006 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Nov 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.