Metal-insulator-metal capacitor and method of fabricating the same
US7554146B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Dec 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a metal-insulator-metal (MIM) capacitor and a method of fabricating the MIM capacitor, a metal-insulator-metal (MIM) capacitor comprises: a lower electrode pattern which is formed on a substrate and includes a conductive layer having a portion as a lower interconnect; a dielectric layer on the lower electrode pattern; a first upper electrode pattern on the dielectric layer; an interlayer insulating layer which covers the first upper electrode pattern, the dielectric layer, and the lower electrode pattern and has a planarized upper surface; a second upper electrode opening pattern formed in the interlayer insulating layer to expose the first upper electrode pattern; a second upper electrode which fills the opening pattern and has an upper surface that is substantially level with an upper surface of the interlayer insulating layer; and an upper interconnect on the interlayer insulating layer and contacts the second upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.