Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
US7556892B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jan 14, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31616
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.