Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
US7556970B2 · kind B2 · utility
2Cited by
1References
13Claims
0Family size
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Key dates
| Filing date | Mar 26, 2007 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Nov 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A damaged layer repairing method repairs a damaged layer formed in a surface of a SiOCH film having a low dielectric constant film, containing silicon, carbon, oxygen and hydrogen and formed on a substrate through the elimination of carbon atoms by the decarbonizing effect of plasmas used in an etching process and an ashing process. CH3 radicals are produced through the thermal decomposition of C8H18O2 gas represented by a structural formula: (CH3)3COOH(CH3)3. CH3 radicals are brought into contact with the damaged layer in the SiOCH film and are made to bond to the damaged layer to repair the damaged layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.